Etch-resistant doped scavenging carbide electrodes

ABSTRACT

A resistive switching memory stack, comprised of a bottom electrode, an oxide layer located on the bottom electrode; and a top electrode located on the oxide layer. The top electrode is comprised of a first layer, an intermediate layer located directly on the first layer, and a top layer located on top of the intermediate layer. Wherein the intermediate layer is comprised of a doped carbide active layer.

BACKGROUND

The present invention relates generally to electrode devices and, inparticular, to an etch-resistant doped scavenging carbide electrode.

Resistive random access memory (a.k.a. RRAM or ReRAM) is considered as apromising technology for electronic synapse devices or memristor forneuromorphic computing as well as high-density and high-speednon-volatile memory application. In neuromorphic computing applications,a resistive memory device can be used as a connection (synapse) betweena pre-neuron and post-neuron, representing the connection weight in theform of device resistance. Multiple pre-neurons and post-neurons can beconnected through a crossbar array of RRAMs, which naturally expresses afully-connected neural network. The density of ReRAM can be increased byvertically stacking ReRAM stacks as practiced in Flash NAND technology,however, ReRAM stacks are typically deposited by Physical VaporDeposition (PVD) to control the oxygen vacancy concentration in themetal oxide layer and this prevents application to three-dimensional(3D) structures. Thus, there is a need for RRAM for 3D structures.

BRIEF SUMMARY

Additional aspects and/or advantages will be set forth in part in thedescription which follows and, in part, will be apparent from thedescription, or may be learned by practice of the invention.

A multilayered electrode comprising a first layer, an intermediate layerlocated directly on the first layer, and a top layer located on top ofthe intermediate layer. Wherein the intermediate layer is comprised of adoped carbide active layer.

A resistive switching memory stack, comprised of a bottom electrode, anoxide layer located on the bottom electrode; and a top electrode locatedon the oxide layer. The top electrode is comprised of a first layer, anintermediate layer located directly on the first layer, and a top layerlocated on top of the intermediate layer. Wherein the intermediate layeris comprised of a doped carbide active layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certainexemplary embodiments of the present invention will be more apparentfrom the following description taken in conjunction with theaccompanying drawings, in which:

FIG. 1 shows an exemplary resistive switching memory stack 100 for a 3Dstructure, in accordance with an embodiment of the present invention;

FIG. 2 shows another exemplary resistive switching memory stack 200 fora 3D structure, in accordance with an embodiment of the presentinvention;

FIG. 3 shows an exemplary method 300 for forming a resistive switchingmemory stack for a 3D structure, in accordance with an embodiment of thepresent invention; and

FIG. 4 shows another exemplary method 400 for forming a resistiveswitching memory stack for a 3D structure, in accordance with anembodiment of the present invention.

DETAILED DESCRIPTION

The following description with reference to the accompanying drawings isprovided to assist in a comprehensive understanding of exemplaryembodiments of the invention as defined by the claims and theirequivalents. It includes various specific details to assist in thatunderstanding but these are to be regarded as merely exemplary.Accordingly, those of ordinary skill in the art will recognize thatvarious changes and modifications of the embodiments described hereincan be made without departing from the scope and spirit of theinvention. In addition, descriptions of well-known functions andconstructions may be omitted for clarity and conciseness.

The terms and words used in the following description and claims are notlimited to the bibliographical meanings but are merely used to enable aclear and consistent understanding of the invention. Accordingly, itshould be apparent to those skilled in the art that the followingdescription of exemplary embodiments of the present invention isprovided for illustration purpose only and not for the purpose oflimiting the invention as defined by the appended claims and theirequivalents.

The present invention is directed to a resistive switching memory stackfor a three-dimensional structure. The resistive switching memory stackcan be used for, but is not limited to, Resistive Random Access Memories(RRAMs), neuromorphic computing applications, and so forth.

In an embodiment, a metal-insulator-metal stack is formed. The bottomelectrode is formed from TiN, deposited by Atomic layer Deposition(ALD), Chemical Vapor Deposition (CVD), or Physical Vapor Deposition(PVD). ALD HfO2 or Ta2O5 or ZrO2 are used as base oxides. The topelectrode is formed as an ALD TiN/Si or N-doped(M)AlC/TiN stack, where Mis a transition metal such as, but not limited to, Ti, Ta, and Nb.Regarding the top electrode, oxygen vacancy concentration is controlledby the TiN/doped(M)AlC thicknesses and Al % in the doped (M)AlC layer ofthe top electrode. Wherein the doped scavenging carbide electrode (doped(M)AlC) comprises a conductive doped carbide active layer between aconductive bottom metal-nitride barrier, and a conductive topmetal-nitride cap. Wherein the conductive doped carbide active layer isdeposited by alternating carbide and dopant-containing layers. Whereinthe dopant-containing layers are Si or N. Wherein the Si layers aredeposited using thermal CVD (e.g. silane, disilane, trisilane,exachlorodisilane, etc.) forming Al4SiC4 doped active layer. Wherein theSiN layers are deposited by thermal ALD (e.g. SiCl4/NH3 precursors).Wherein the dopent-containing layers are AlN and the AlN layers aredeposited by thermal ALD (e.g. TMA/NH3).

The metal-insulator-metal stack can be all deposited by ALD andapplicable to a 3D structure including, but not limited to any of thefollowing: a Vertical Restive Random Access Memory (VRRAM); a deepTrench in Front End of Line (FEOL); a cylinder trench in Back End ofLine (BEOL); and a fin structure. It is to be appreciated that thepreceding 3D structures are merely illustrative and, thus, the presentinvention can be readily applied to other 3D structures are readilycontemplated by one of ordinary skill in the art given the teachings ofthe present invention provided herein, while maintaining the spirit ofthe present invention.

As used herein, a “fin structure” refers to a semiconductor material,which is employed as the body of a semiconductor device, in which thegate structure is positioned around the fin structure such that chargeflows down the channel on the two sidewalls of the fin structure andoptionally along the top surface of the fin structure.

As used herein, a “metal” is an electrically conductive material,wherein metals atoms are held together by the force of metallic bonds,and the energy band structure of the metal's conduction and valencebands overlap, and hence, there is no energy gap.

As used herein, the term “memory device” means a structure in which theelectrical state can be altered and then retained in the altered state,in this way a bit of information can be stored.

Atomic Layer Deposition (ALD) is a thin film deposition method in whicha film is grown on a substrate by exposing its surface to alternategaseous species (typically referred to as precursors). In contrast tochemical vapor deposition, the precursors in ALD are never presentsimultaneously in the reactor, but instead are inserted as a series ofsequential, non-overlapping pulses. In each pulse, the precursormolecules react with the surface in a self-limiting way, so that thereaction terminates once all the reactive sites on the surface areconsumed. Consequently, the maximum amount of material deposited on thesurface after a single exposure to all of the precursors (a.k.a. an ALDcycle) is determined by the nature of the precursor-surface interaction.By varying the number of ALD cycles, it is possible to grow materialsuniformly and with high precision on arbitrarily complex and largesubstrates such as three-dimensional structures.

FIG. 1 shows an exemplary resistive switching memory stack 100 for a 3Dstructure, in accordance with an embodiment of the present invention. Itis to be appreciated that the elements of stack 100 are not shown drawnto scale, for the sakes of illustration and clarity.

The resistive switching memory stack 100 includes a bottom electrode110, a metal oxide layer 120, and a top electrode 130. The metal oxidelayer 120 is disposed over the bottom electrode 110, and the topelectrode 130 is disposed over the metal oxide layer 120.

The bottom electrode 110 is formed from TiN. In an embodiment, thebottom electrode 110 is 10-50 nm thick.

The metal oxide layer 120 is formed from HfO2 or Ta2O5 or ZrO2. In anembodiment, the metal oxide layer 120 is 3-10 nm thick.

The top electrode 130 includes a bottom layer 131, an intermediate layer132, and a top layer 133.

The bottom layer 131 is formed from TiN or TaN. In an embodiment, thebottom layer 131 is 0.3-3.0 nm thick.

The intermediate layer 132 is formed from a doped carbide (M)AlC, whereM is a transition metal and can be, but is not limited to, e.g., Ti, Ta,Nb, and so forth. Wherein the carbide can be selected from a groupconsisting of Al_(x)C_(y), Al₄C₃, or Ti_(x)Al_(y)C_(z). The dopingmaterial can be, for example, Si, N, or an equivalent. The dopingmaterial in the intermediate layer 132 prevents the scavenging of O fromthe dielectric layer (e.g. the metal oxide layer 120). The dopingmaterial in the intermediate layer 232 does decrease hydration potentialand wet etchability, to chemistry such as H₂O, NH₄OH, H₂O₂, of theintermediate layer 232, without compromising the ability of theintermediate layer 232 to scavenge oxygen from the dielectric layer ofthe memory cell. The scavenging effect is needed to control the forming,set, and reset voltages of the cell, i.e. its fundamental operatingprinciple. The etch resistance effect is needed to preventundercut/delamination in the intermediate layer 232 post RIE pillardefinition of the memory cell when exposed to wet chemistry, includingetchants. The intermediate layer 132 can be comprised of a dopedcarbide, for example, Al₄SiC₄. Wherein the pillar cell contained incrossbar architecture do not exhibit an undercut of the intermediatelayer 132 containing the conductive doped carbide active layer. In anembodiment, the intermediate layer 132 is 1-5 nm thick.

The top layer 133 is formed from TiN or TaN. In an embodiment, the toplayer 133 is 10-50 nm thick.

It is to be appreciated that various changes can be made to thestructure shown in FIG. 1. For example, the TiN thickness can bereduced, and low resistivity metals (e.g., W, Al, Cu, and so forth) canbe added to the bottom and top electrodes. These and other variations tothe structure of FIG. 1 are readily determined by one of ordinary skillin the art given the teachings of the present invention provided herein,while maintaining the spirit of the present invention.

FIG. 2 shows another exemplary resistive switching memory stack 200 fora 3D structure, in accordance with an embodiment of the presentinvention. It is to be appreciated that the elements of stack 200 arenot shown drawn to scale, for the sakes of illustration and clarity.

The resistive switching memory stack 200 includes a first lowresistivity metal layer 205, a bottom electrode 210, a metal oxide layer220, a top electrode 230, and a second low resistivity metal layer 240.

The bottom electrode 210 is disposed over the first low resistivitymetal layer 205, the metal oxide layer 220 is disposed over the bottomelectrode 210, the top electrode 230 is disposed over the metal oxidelayer 220, and the second low resistivity metal layer 240 is disposedover the top electrode 230.

The first low resistivity metal layer 205 is formed from one or more ofW, Al, and/or Cu.

The bottom electrode 210 is formed from TiN. In an embodiment, thebottom electrode 210 is 5-10 nm thick.

The metal oxide layer 220 is formed from HfO₂ or Ta₂O₅ or ZrO₂. In anembodiment, the metal oxide layer 220 is 3-10 nm thick.

The top electrode 230 includes a bottom layer 231, an intermediate layer232, and a top layer 233.

The bottom layer 231 is formed from TiN or TaN. In an embodiment, thebottom layer 231 is 0.3-3.0 nm thick.

The intermediate layer 232 is formed from a doped carbide (M)AlC, whereM is a transition metal. Wherein the carbide can be selected from agroup consisting of Al_(x)C_(y), Al₄C₃, or Ti_(x)Al_(y)C_(z). The dopingmaterial can be, for example, Si, N, or an equivalent. The dopingmaterial in the intermediate layer 232 does not prevent the scavengingof O from the dielectric layer (e.g. the metal oxide layer 120). Thedoping material in the intermediate layer 232 does decrease hydrationpotential and wet etchability, to chemistry such as H₂O, NH₄OH, H₂O₂, ofthe intermediate layer 232, without compromising the ability of theintermediate layer 232 to scavenge oxygen from the dielectric layer ofthe memory cell. The scavenging effect is needed to control the forming,set, and reset voltages of the cell, i.e. its fundamental operatingprinciple. The etch resistance effect is needed to preventundercut/delamination in the intermediate layer 232 post RIE pillardefinition of the memory cell when exposed to wet chemistry, includingetchants. The intermediate layer 232 can be comprised of a dopedcarbide, for example, Al4SiC4. Wherein the pillar cell contained incrossbar architecture do not exhibit an undercut of the intermediatelayer 232 containing the conductive doped carbide active layer. In anembodiment, the intermediate layer 232 is 1-5 nm thick.

The top layer 233 is formed from TiN or TaN. In an embodiment, the toplayer 233 is 1-3 nm thick.

The second low resistivity metal layer 240 is formed from one or more ofW, Al, and/or Cu. It is to be appreciated that the metals can be thesame or different between the first low resistivity metal layer 205 andthe second low resistivity metal layer 240.

It is to be appreciated that the stacks shown in FIGS. 1 and 2 can beformed on respective insulator films. The insulator films include butare not limited to: any interlayer dielectric materials used forsemiconductor processing, such as SiO2, SiN, or low k materials (e.g.,SiCOH).

FIG. 3 shows an exemplary method 300 for forming a resistive switchingmemory stack for a 3D structure, in accordance with an embodiment of thepresent invention. The method 300 can form the stack, for example, withrespect to any of the following: a Vertical Restive Random Access Memory(VRRAM); a deep Trench in Front End of Line (FEOL); a cylinder trench inBack End of Line (BEOL); and a fin structure.

At step 310, form a bottom electrode from TiN. In an embodiment, thebottom electrode 110 is 10-50 nm thick. Of course, other metals and/orthicknesses can be used for the bottom electrode, while maintaining thespirit of the present invention.

At step 320, form, over the bottom electrode, a metal oxide layer fromHfO₂ or Ta₂O₅ or ZrO₂. In an embodiment, the metal oxide layer is 3-10nm thick. Of course, other metals and/or thicknesses can be used for themetal oxide layer, while maintaining the spirit of the presentinvention.

At step 330, form, over the metal oxide layer, a top electrode having abottom layer, an intermediate layer, and a top layer. The bottom layer131 is formed from TiN or TaN. In an embodiment, the bottom layer 131 is0.3-3.0 nm thick. The intermediate layer 132 is formed from a doped(M)AlC, where M is a transition metal and the doping material is Si, Nor another suitable material. Wherein the intermediate layer 132, e.g.,the doped scavenging carbide electrode (doped (M)AlC), is formed byalternating deposition of carbide and dopant-containing layers. Whereinthe carbide can be selected from a group consisting of Al_(x)C_(y),Al₄C₃, or Ti_(x)Al_(y)C_(z). The doping material in the intermediatelayer 232 does decrease hydration potential and wet etchability, tochemistry such as H₂O, NH₄OH, H₂O₂, of the intermediate layer 232,without compromising the ability of the intermediate layer 232 toscavenge oxygen from the dielectric layer of the memory cell. Thescavenging effect is needed to control the forming, set, and resetvoltages of the cell, i.e. its fundamental operating principle. The etchresistance effect is needed to prevent undercut/delamination in theintermediate layer 232 post RIE pillar definition of the memory cellwhen exposed to wet chemistry, including etchants. Wherein thedopant-containing layers are Si or N. Wherein the Si layers aredeposited using thermal CVD (e.g. silane, disilane, trisilane,exachlorodisilane, etc.) forming Al4SiC4 doped active layer. Wherein theSiN layers are deposited by thermal ALD (e.g. SiCl4/NH3 precursors).Wherein the dopent-containing layers are AlN and the AlN layers aredeposited by thermal ALD (e.g. TMA/NH3). In an embodiment, theintermediate layer 132 is 1-5 nm thick. The top layer 133 is formed fromTiN or TaN. In an embodiment, the top layer 133 is 10-50 nm thick. Ofcourse, other metals and/or thicknesses can be used for each of thelayers of the top electrode, while maintaining the spirit of the presentinvention.

FIG. 4 shows another exemplary method 400 for forming a resistiveswitching memory stack for a 3D structure, in accordance with anembodiment of the present invention. The method 400 can form the stack,for example, with respect to any of the following: a Vertical RestiveRandom Access Memory (VRRAM); a deep Trench in Front End of Line (FEOL);a cylinder trench in Back End of Line (BEOL); and a fin structure.

At step 410, form a first low resistivity metal layer 205 from one ormore of W, Al, and/or Cu. Of course, other metals can be used for thefirst low resistivity metal layer, while maintaining the spirit of thepresent invention.

At step 420, form, over the first low resistivity metal layer 205, abottom electrode 210 from TiN. In an embodiment, the bottom electrode210 is 5-10 nm thick. Of course, other metals and/or thicknesses can beused for the bottom electrode 210, while maintaining the spirit of thepresent invention.

At step 430, form, over the bottom electrode 210, a metal oxide layer220 from HfO2 or Ta2O5 or ZrO2. In an embodiment, the metal oxide layer220 is 3-10 nm thick. Of course, other metals and/or thicknesses can beused for the metal oxide layer 220, while maintaining the spirit of thepresent invention.

At step 440, form, over the metal oxide layer 220, a top electrode 230having a bottom layer 231, an intermediate layer 232, and a top layer233. The bottom layer 231 is formed from TiN or TaN. In an embodiment,the bottom layer 231 is 0.3-3.0 nm thick. The intermediate layer 232 isformed from a doped (M)AlC, where M is a transition metal, and thedoping material is Si or N. Wherein the intermediate layer 232, e.g.,the doped scavenging carbide electrode (doped (M)AlC), is formed byalternating deposition of carbide and dopant-containing layers. Whereinthe carbide can be selected from a group consisting of Al_(x)C_(y),Al₄C₃, or Ti_(x)Al_(y)C_(z). The doping material in the intermediatelayer 232 does decrease hydration potential and wet etchability, tochemistry such as H₂O, NH₄OH, H₂O₂, of the intermediate layer 232,without compromising the ability of the intermediate layer 232 toscavenge oxygen from the dielectric layer of the memory cell. Thescavenging effect is needed to control the forming, set, and resetvoltages of the cell, i.e. its fundamental operating principle. The etchresistance effect is needed to prevent undercut/delamination in theintermediate layer 232 post RIE pillar definition of the memory cellwhen exposed to wet chemistry, including etchants. Wherein thedopant-containing layers are Si or N. Wherein the Si layers aredeposited using thermal CVD (e.g. silane, disilane, trisilane,exachlorodisilane, etc.) forming Al4SiC4 doped active layer. Wherein theSiN layers are deposited by thermal ALD (e.g. SiCl4/NH3 precursors).Wherein the dopent-containing layers are AlN and the AlN layers aredeposited by thermal ALD (e.g. TMA/NH3). In an embodiment, theintermediate layer 232 is 1-5 nm thick. The top layer 233 is formed fromTiN or TaN. In an embodiment, the top layer 233 is 1-3 nm thick. Ofcourse, other metals and/or thicknesses can be used for each of thelayers of the top electrode 230, while maintaining the spirit of thepresent invention.

At step 450, form, over the top electrode 230, a second low resistivitymetal layer 240 from one or more of W, Al, and/or Cu. Of course, othermetals can be used for the second low resistivity metal layer 240, whilemaintaining the spirit of the present invention.

It is to be appreciated that for the sake of illustration, variousmetals and metal oxides and various thickness for the metals and metaloxides have been described herein. However, as readily appreciated byone of ordinary skill in the art given the teachings of the presentinvention provided herein, these and other metals and metal oxides canalso be used, as well as other thicknesses, while maintaining the spiritof the present invention. For example, regarding the electrodesdescribed herein, such electrodes may include any suitable conductivematerial, such as polycrystalline or amorphous silicon, germanium,silicon germanium, a metal (e.g., tungsten, titanium, tantalum,ruthenium, zirconium, cobalt, copper, aluminum, lead, platinum, tin,silver, gold), a conducting metallic compound material (e.g., tantalumnitride, titanium nitride, tungsten silicide, tungsten nitride,ruthenium oxide, cobalt silicide, nickel silicide), carbon nanotube,conductive carbon, graphene, or any suitable combination of thesematerials. The conductive material may further comprise dopants that areincorporated during or after deposition.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes SixGe1-x where x is less than or equal to 1, etc. In addition,other elements can be included in the compound and still function inaccordance with the present principles. The compounds with additionalelements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Having described preferred embodiments of an apparatus and method (whichare intended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

What is claimed is:
 1. A multilayered electrode comprising: a firstlayer; an intermediate layer located directly on the first layer,wherein the intermediate layer is comprised of a doped carbide activelayer; and a top layer located directly on top of the intermediatelayer.
 2. The multilayered electrode of claim 1, wherein the dopingmaterial for the doped carbide active layer is comprised of either Si orN.
 3. The multilayered electrode of claim 2, wherein the doped carbideactive layer is comprised of Al4SiC4.
 4. The multilayered electrode ofclaim 2, wherein the doping material limits hydration of the dopedcarbide active layer and reduces the etch rate from a wet etchingprocess.
 5. The multilayered electrode of claim 1, wherein the bottomlayer is selected from a group consisting of TiN or TaN, wherein thebottom layer has a thickness in the range of 0.3 to 3.0 nm, wherein thetop layer is selected from a group consisting of TiN or TaN, wherein thebottom layer has a thickness in the range of 10 to 50 nm.
 6. Themultilayered electrode of claim 1, wherein the carbide of the dopedcarbide active layer can be selected from a group consisting ofAl_(x)C_(y), Al₄C₃, or Ti_(x)Al_(y)C_(z).
 7. A resistive switchingmemory stack, comprising: a bottom electrode; an oxide layer located onthe bottom electrode; and a top electrode located on the oxide layer,wherein the top electrode is comprised of: a first layer; anintermediate layer located directly on the first layer, wherein theintermediate layer is comprised of a doped carbide active layer; and atop layer located directly on top of the intermediate layer.
 8. Theresistive switching memory stack of claim 7, wherein the bottomelectrode is formed from TiN.
 9. The resistive switching memory stack ofclaim 7, wherein the bottom electrode is 10-50 nm thick.
 10. Theresistive switching memory stack of claim 7, wherein the oxide layer isformed from a compound selected from the group consisting of HfO2 orTa2O5 or ZrO2.
 11. The resistive switching memory stack of claim 7,wherein the oxide layer is 3-10 nm thick.
 12. The resistive switchingmemory stack of claim 7, wherein the doping material for the dopedcarbide active layer is comprised of either Si or N.
 13. The resistiveswitching memory stack of claim 12, wherein the doped carbide activelayer is comprised of Al4SiC4.
 14. The resistive switching memory stackof claim 12, wherein the doping material limits hydration of the dopedcarbide active layer and reduces the etch rate from a wet etchingprocess.
 15. The resistive switching memory stack of claim 7, whereinthe bottom layer is selected from a group consisting of TiN or TaN,wherein the bottom layer has a thickness in the range of 0.3 to 3.0 nm,wherein the top layer is selected from a group consisting of TiN or TaN,wherein the bottom layer has a thickness in the range of 10 to 50 nm.16. The resistive switching memory stack of claim 7, the carbide of thedoped carbide active layer can be selected from a group consisting ofAl_(x)C_(y), Al₄C₃, or Ti_(x)Al_(y)C_(z).
 17. A method for forming aresistive switching memory stack, the method comprising: forming abottom electrode from one or more conductors; forming an oxide layerlocated on the bottom electrode; and forming a top electrode located ontop of the oxide layer, wherein forming the top electrode comprises:forming a bottom layer directly on top of the oxide layer, wherein thebottom layer is selected from a group consisting of TiN or TaN; formingan intermediate layer comprised of a doped carbide active layer, whereinthe doped carbide active layer is formed by alternating deposition ofcarbide and dopant-containing layers, wherein the carbide of the dopedcarbide active layer can be selected from a group consisting ofAl_(x)C_(y), Al₄C₃, or Ti_(x)Al_(y)C_(z); and forming a top layerdirectly on top of the intermediate layer, wherein the top layer isselected from a group consisting of TiN or TaN.
 18. The method of claim17, wherein the dopant-containing layers are Si or N.
 19. The method ofclaim 18, wherein the intermediate layer is comprised of Al4SiC4. 20.The method of claim 18, wherein the doping material limits hydration ofthe doped carbide active layer and reduces the etch rate from a wetetching process.